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渡邊 健太*; 堀澤 侑平*; 吉本 将隆*; 田村 和久; 鈴木 耕太*; 菅野 了次*; 平山 雅章*
Nano Letters, 24(6), p.1916 - 1922, 2024/02
被引用回数：2 パーセンタイル：95.46(Chemistry, Multidisciplinary)電気化学反応の固液界面から固固界面への拡張が進んでいる。本研究では、酸化チタン/リン酸リチウム/リチウムから構成される全固体電池で安定的に光電気化学反応を起こすことに成功した。酸化チタンの電位をフラットポテンシャルより正側にして光照射すると酸化電流が増加した。固固界面における光電気化学反応の原理は、固液界面の場合と同じであると考えられ、光電気化学反応が全固体電池でも起こせることを示した。
Te
Wang, Y.*; 梶原 駿*; 松岡 秀樹*; Saika, B. K.*; 山神 光平*; 竹田 幸治; 和達 大樹*; 石坂 香子*; 岩佐 義宏*; 中野 匡規*
Nano Letters, 22(24), p.9964 - 9971, 2022/12
被引用回数：15 パーセンタイル：84.45(Chemistry, Multidisciplinary)In a conventional magnetic material, a long-range magnetic order develops in three dimensions, and reducing a layer number weakens its magnetism. Here we demonstrate anomalous layer-number-independent ferromagnetism down to the two-dimensional (2D) limit in a metastable phase of CrTe. We fabricated CrTe thin films by molecular-beam epitaxy and found that CrTe could host two distinct ferromagnetic phases characterized with different Curie temperatures (
). One is the bulk-like high- phase showing room-temperature ferromagnetism, which is consistent with previous studies. The other is the metastable low- phase with 
160 K, which exhibits a layer-number-independent down to the 2D limit in marked contrast with the conventional high- phase, demonstrating a purely 2D nature of its ferromagnetism. Such significant differences between two distinct phases could be attributed to a small variation in the doping level, making this material attractive for future ultracompact spintronics applications with potential gate-tunable room-temperature 2D ferromagnetism.
松岡 秀樹*; Barnes, S. E.*; 家田 淳一; 前川 禎通; Bahramy, M. S.*; Saika, B. K.*; 竹田 幸治; 和達 大樹*; Wang, Y.*; 吉田 訓*; et al.
Nano Letters, 21(4), p.1807 - 1814, 2021/02
被引用回数：14 パーセンタイル：76.58(Chemistry, Multidisciplinary)Magnetocrystalline anisotropy, a key ingredient for establishing long-range order in a magnetic material down to the two-dimensional (2D) limit, is generally associated with spin-orbit interaction (SOI) involving a finite orbital angular momentum. Here we report strong out-of-plane magnetic anisotropy without orbital angular momentum, emerging at the interface between two different van der Waals (vdW) materials, an archetypal metallic vdW material NbSe
possessing Zeeman-type SOI and an isotropic vdW ferromagnet V
Se
. We found that the Zeeman SOI in NbSe induces robust out-of-plane magnetic anisotropy in V
Se
down to the 2D limit with a more than 2-fold enhancement of the transition temperature. We propose a simple model that takes into account the energy gain in NbSe in contact with a ferromagnet, which naturally explains our observations. Our results demonstrate a conceptually new magnetic proximity effect at the vdW interface, expanding the horizons of emergent phenomena achievable in vdW heterostructures.
He, H.*; Naeem, M.*; Zhang, F.*; Zhao, Y.*; Harjo, S.; 川崎 卓郎; Wang, B.*; Wu, X.*; Lan, S.*; Wu, Z.*; et al.
Nano Letters, 21(3), p.1419 - 1426, 2021/02
被引用回数：41 パーセンタイル：95.42(Chemistry, Multidisciplinary)In CrCoNi, a so-called medium-entropy alloy, an fcc-to-hcp phase transformation has long been anticipated. Here, we report an in situ loading study with neutron diffraction, which revealed a bulk fcc-to-hcp phase transformation in CrCoNi at 15 K under tensile loading. By correlating deformation characteristics of the fcc phase with the development of the hcp phase, it is shown that the nucleation of the hcp phase was triggered by intrinsic stacking faults. The confirmation of a bulk phase transformation adds to the myriads of deformation mechanisms available in CrCoNi, which together underpin the unusually large ductility at low temperatures.
Meer, H.*; Schreiber, F.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Gomonay, O.*; Sinova, J.*; Baldrati, L.*; Kl
ui, M.*
Nano Letters, 21(1), p.114 - 119, 2021/01
被引用回数：54 パーセンタイル：96.96(Chemistry, Multidisciplinary)We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
Se epitaxial thin films中野 匡規*; Wang, Y.*; 吉田 訓*; 松岡 秀樹*; 真島 裕貴*; 池田 啓祐*; 平田 靖透*; 竹田 幸治; 和達 大樹*; 小濱 芳允*; et al.
Nano Letters, 19(12), p.8806 - 8810, 2019/12
被引用回数：57 パーセンタイル：92.23(Chemistry, Multidisciplinary)The discoveries of intrinsic ferromagnetism in atomically thin van der Waals crystals have opened a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. Here we demonstrate that VSe epitaxial thin films grown by molecular-beam epitaxy exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons although the bulk counterpart is originally antiferromagnetic. Moreover, thickness-dependence measurements reveal that this newly developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy.
長谷川 美佳*; 菅原 健太*; 須藤 亮太*; 三本菅 正太*; 寺岡 有殿; 吉越 章隆; Filimonov, S.*; 吹留 博一*; 末光 眞希*
Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10
被引用回数：14 パーセンタイル：52.11(Nanoscience & Nanotechnology)グラフェンは、電子および光デバイスの有望な材料として注目されている。しかしながら、Si上のグラフェン(GOS)の形成には1473K以上の温度が必要となるため、Siテクノロジーとの相性は良いとは言えない。ここでは、Ni援用GOSのグラフェン形成に関して報告する。グラフェン形成温度が200K以上低下することを示し、加熱、アニール、冷却プロセス中の固相反応を放射光XPSで詳細に調べた。Ni/SiC反応の役割、Niシリサイド形成ばかりでなく炭化Ni形成がグラフェン形成に重要なプロセスであることを明にした。
Biermanns, A.*; Dimakis, E.*; Davydok, A.*; 佐々木 拓生; Geelhaar, L.*; 高橋 正光; Pietsch, U.*
Nano Letters, 14(12), p.6878 - 6883, 2014/12
被引用回数：27 パーセンタイル：72.54(Chemistry, Multidisciplinary)The dynamic relation between the growth conditions and the structural composition of the catalyst-free InAs nanowires was investigated using time-resolved X-ray scattering and diffraction measurements during the growth by molecular beam epitaxy. A spontaneous build-up of liquid indium is directly observed in the beginning of the growth process and associated with the simultaneous nucleation of InAs nanowires predominantly in the wurtzite phase. After their nucleation, the nanowires grow in the absence of liquid indium, and with a highly defective wurtzite structure. A pathway to pure wurtzite nanowires is presented through this work.
Avramov, P.; Chernozatonskii, L. A.*; Sorokin, P. B.*; Gordon, M. S.*
Nano Letters, 7(7), p.2063 - 2067, 2007/07
被引用回数：13 パーセンタイル：51.68(Chemistry, Multidisciplinary)経験的スキームを使って、20面体状中心核(Si-IC)とその頂点から伸びる5角形の花びら(Si-PP)をベースに新奇なシリコンナノクラスターを作り上げた。Si-IC/Si-PP界面が形成される方がエネルギー的に好ましいことがわかった。また、実際に観測されているシリコンナノ構造の幾つかは本研究で提案するナノ構造の存在により説明できる。さらに、拡張ヒュッケル法による電子構造計算によって、本研究で提案したナノ構造がナノスケールのトンネル接合として振る舞う可能性を示した。
